| PART |
Description |
Maker |
| IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| HY5W2A6CSF-HF HY5W2A6CSF-SF |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
|
HYNIX SEMICONDUCTOR INC
|
| MT48H4M16LFB4-10IT |
4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
|
|
| IS42R16800E-8BL |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
|
INTEGRATED SILICON SOLUTION INC
|
| IS42VM16400K-6BLI |
SYNCHRONOUS DRAM, PBGA54
|
INTEGRATED SILICON SOLUTION INC
|
| HY5V66DLF-P |
4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
|
HYNIX SEMICONDUCTOR INC
|
| IS42S16160D-75EBLI IS42S16160D-75ETL IS42S16160D-7 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
|
| K4M64163PH-RG750 |
4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54
|
Samsung Semiconductor Co., Ltd.
|
| K4M561633G K4M561633G-RBF1H K4M561633G-RBF1L K4M56 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4M64163PK K4M64163PK-BE75 K4M64163PK-RE75 K4M6416 |
4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 100万16 × 4银行4FBGA移动SDRAM
|
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
